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STGB30H65DFB2 ST Transistor 30 A High Speed HB2 Series IGBT D2PAK-3

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STGB30H65DFB2 ST Transistor 30 A High Speed HB2 Series IGBT D2PAK-3

Brand Name : STMicroelectronics

Model Number : STGB30H65DFB2

Place of Origin : Italy

MOQ : 1PCS

Price : Negotiated Price

Payment Terms : T/T, L/C

Supply Ability : 10000 PCS+48Hours

Delivery Time : 24-72hours

Packaging Details : Reel

STMicroelectronics : STGB30H65DFB2

Encapsulation : D2PAK-3

Collector-emitter saturation voltage : 1.65 V

Pd - Power dissipation : 167 W

Minimum operating temperature : -55℃

Maximum operating temperature : +175℃

Packing quantity : 1000 PCS

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STGB30H65DFB2 ST Transistor 30 A high speed HB2 series IGBT D2PAK-3

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
Technology: Si
Mounting Style: SMD/SMT
Configuration: Single
Collector-Emitter Maximum Voltage VCEO: 650 V
Collector-Emitter Saturation Voltage: 1.65 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 50 A
Pd-Power Dissipation: 167 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Package: Reel
Package: Cut Tape
Package: MouseReel
Brand: STMicroelectronics
Product Type: IGBT Transistors
Package Quantity: 1000 PCS
Subcategory: IGBTs
Unit Weight: 1.380 g

STGB30H65DFB2 ST Transistor 30 A High Speed HB2 Series IGBT D2PAK-3

STGB30H65DFB2 ST Transistor 30 A High Speed HB2 Series IGBT D2PAK-3


Product Tags:

IGBT D2PAK-3

      

STGB30H65DFB2 ST Transistor

      

30 A IGBT Transistor

      
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STGB30H65DFB2 ST Transistor 30 A High Speed HB2 Series IGBT D2PAK-3 Images

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